ZAO膜磁控溅射变参数制备技术  

Preparation technology of magnetron sputtering with variational parameters for ZAO films

作　　者：韩力[1] 熊予莹[1] 金玲 

机构地区：[1]华南师范大学物理与电信工程学院,广东广州510006 [2]广东省粤晶高科股份有限公司,广东广州510663

出　　处：《电子元件与材料》2008年第9期77-79,共3页Electronic Components And Materials

摘　　要：采用射频磁控溅射技术生长ZnO:Al(ZAO)薄膜,用X射线衍射仪检测薄膜的结晶质量。为了提高薄膜的生长效率,进行了在生长过程中调整生长参数的试验。结果发现,生长过程中适当地改变参数,不仅可以提高薄膜的生长效率,还可以获得结晶质量更好的薄膜。在工作压强0.35Pa、溅射功率120W条件下粗生长后,改变工作压强为0.2Pa、溅射功率80W进行细生长,制得的薄膜平均可见光透射率为88%,电阻率为7.8×10–4Ω·cm。ZnO：Al（ZAO） thin films were prepared by r.f. magnetron sputtering. XRD instrument was used to examine the crystalline quality. For increasing growth rate of ZAO thin film, the tests altering growth paramenters was carried out in the process. Results show that the thin film growth rate increases and the crystalline quality can be improved by altering the paramenters correctly in the growth process. The thin films＇ average visible transmittance is 88%, resistivity is 7.8×10^-4Ω·cm in the conditions of coarse growth in 0.35 Pa of working pressure, 120 W of sputtering power, then fine growth in 0.2 Pa of working pressure, 80 W of sputtering power.

关 键 词：无机非金属材料 ZAO薄膜 磁控溅射 变参数 

分 类 号：TN304[电子电信—物理电子学]