溅射气氛对VO_x薄膜结构及性能的影响  

Effect of Sputtering Atmosphere on the Structure and Properties of VO_x Films

作　　者：方广志[1] 李合琴[1] 沈洪雪[1] 宋泽润[2] 

机构地区：[1]合肥工业大学材料科学与工程学院,安徽合肥230009 [2]中国电子科技集团公司43研究所,安徽合肥230022

出　　处：《红外》2008年第9期28-32,共5页Infrared

基　　金：安徽省红外与低温等离子体重点实验室(2007C002107D)资助

摘　　要：溅射总气压一定,通过改变氧氩气体的比例,用射频磁控反应溅射法在玻璃衬底上制备VO_x薄膜。用X射线衍射(XRD)、扫描电子显微镜(SEM)、X射线光电子能谱(XPS)、QJ31单臂电桥等测试了不同氧氩比例对VO_x薄膜的晶体结构、表面形貌、成分和电阻的影响。测试分析结果表明,氧氩比是影响VO_x薄膜结构及性能的重要因素。在我们的实验条件下,最佳氧氩比为2:25,电阻温度系数为-2.87%/℃。The VOχ films were deposited on the glass substrates by using a RF magnetron reactive sputtering method with different O2/Ar flow ratios at the same sputtering air pressure. The effects of different O2/Ar flow ratios on the cristal structure, surface mophology, composition and resistance of VOχ films were tested by using X-ray Diffraction （XRD）, Scanning Electron Microscope （SEM）, X-ray Photoelectron Specotroscopy （XPS） and QJ31 Wheatstone bridge. The results showed that the O2/Ar flow ratio was the important factor to affect the structure and property of VOχ films. Under our experimental condition, the optimal O2/Ar flow ratio was 2 ： 25 and the coefficient of electric resistance vs temperature was -2.87%/ ℃.

关 键 词：VOχ薄膜 射频磁控反应溅射 电阻温度系数 热致变色材料 

分 类 号：TB383.2[一般工业技术—材料科学与工程]