氨化法制备大量单晶GaN纳米线及其特性研究  

Synthesis and Characterization of Large-scale Single Crystalline GaN Nanowires through Ammonification Technique

作　　者：薛成山[1] 秦丽霞[1] 庄惠照[1] 陈金华[1] 杨兆柱[1] 李红[1] 

机构地区：[1]山东师范大学半导体研究所,济南250014

出　　处：《微细加工技术》2008年第2期15-18,共4页Microfabrication Technology

基　　金：国家重大自然科学基金资助项目(9020102590301002)

摘　　要：利用磁控溅射技术先在硅衬底上制备Ga2O3/Co薄膜,然后在管式炉中通入流动的氨气在950℃对薄膜进行氨化,反应后成功制备出大量GaN纳米线。采用X射线衍射(XRD)、傅里叶红外吸收光谱(FTIR)、扫描电子显微镜(SEM)和高分辨透射电子显微镜(HRTEM)对样品进行分析。结果表明,采用此方法得到了六方纤锌矿结构的GaN单晶纳米线,纳米线的直径在50 nm^150 nm范围内,长度为几十微米。A mass of GaN nanowires were synthesized by ammoniating Ga2O3/Co films at 950 ℃ .These GaN nanowires were characterized by X-ray diffraction （XRD）, Fourier transformed infrared spectroscopy （FTIR）, scanning electron microscope （SEM） and high resolution transmission electron microscopy （HRTEM）.The results indicate that these nanowires are hexagonal wurtzite GaN single crystals. The diameter of the nanowires is in the range of 50 - 150 nm with the lengths up to several tens of micrometers.

关 键 词：磁控溅射 氮化镓纳米线 钴 X射线衍射 

分 类 号：TN304[电子电信—物理电子学]