100A/1200V 方片 GTR 的研制  

Development of 100A/1200V Square chip GTR

作　　者：王正鸣[1] 李建华[1] 王彩琳[1] 刘东莉[1] 

机构地区：[1]西安电力电子技术研究所

出　　处：《电力电子技术》1997年第4期92-95,共4页Power Electronics

基　　金：国家"八五"重点科技攻关专题

摘　　要：通过计算机数值计算求解半导体器件方程组，对方片达林顿ＧＴＲ体内的关键参数———轻掺杂集电区宽度进行了临界设计，最大限度地协调了击穿电压与饱和压降、电流增益、开关时间之间的矛盾。在典型的电力半导体器件工艺条件下，开发出了一种类台面方片高压隔离终端，提高了生产成品率，形成了国产化的低成本ＧＴＲ方片制造技术。By computer numerical calculations,a set of semiconductor device equations are solved.A key parameter in bulk of darlington structure,the width of lightly doped collector area is determined critically.This makes the best compromise between breakdown voltage and saturation drop,current gain as well as switch time of a device.A mesa like junction termination for high voltage is developed by means of typical technological condition of the power semiconductor devices and a high yield of volume production is reached.So a domestic technology producing low cost GTR device becomes matured.

关 键 词：晶体管 电力晶体管 结终端 方片工艺 制造 

分 类 号：TN322.05[电子电信—物理电子学]