Study of valence intersubband absorption in tensile strained Si/SiGe quantum wells  

作　　者：林桂江 赖虹凯 李成 陈松岩 余金中 

机构地区：[1]Department of Physics,Semiconductor Photonics Research Center,Xiamen University [2]State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences

出　　处：《Chinese Physics B》2008年第9期3479-3483,共5页中国物理B（英文版）

基　　金：supported by National Natural Science Foundation of China (Grant Nos 50672079,60336010 and 60676027);National Basic Research Program of China (Grant No 2007CB613400)

摘　　要：The hole subband structures and effective masses of tensile strained Si/Sil-yGey quantum wells are calculated by using the 6 × 6 k·p method. The results show that when the tensile strain is induced in the quantum well, the light-hole state becomes the ground state, and the light hole effective masses in the growth direction are strongly reduced while the in-plane effective masses are considerable. Quantitative calculation of the valence intersubband transition between two light hole states in a 7nm tensile strained Si/Si0.55Ge0.45 quantum well grown on a relaxed Si0.5Ge0.5 （100） substrates shows a large absorption coefficient of 8400 cm^-1.The hole subband structures and effective masses of tensile strained Si/Sil-yGey quantum wells are calculated by using the 6 × 6 k·p method. The results show that when the tensile strain is induced in the quantum well, the light-hole state becomes the ground state, and the light hole effective masses in the growth direction are strongly reduced while the in-plane effective masses are considerable. Quantitative calculation of the valence intersubband transition between two light hole states in a 7nm tensile strained Si/Si0.55Ge0.45 quantum well grown on a relaxed Si0.5Ge0.5 （100） substrates shows a large absorption coefficient of 8400 cm^-1.

关 键 词：SI/SIGE tensile strain effective mass valence intersubband transition 

分 类 号：O471.1[理学—半导体物理] O484.41[理学—物理]