半导体硅重构表面及其相变动力学的研究进展  

Silicon reconstructed surfaces and phase transitions

作　　者：徐野川[1] 刘邦贵[1] 

机构地区：[1]中国科学院物理研究所,北京100190

出　　处：《物理》2008年第9期628-630,共3页Physics

基　　金：国家自然科学基金(批准号:10774180;60621091);国家重点基础研究发展计划(批准号:2005CB623602);中国科学院知识创新工程(批准号:KJCX2.YW.W09-5)资助项目

摘　　要：简单介绍了文章作者在半导体硅重构表面及其相变动力学研究方面的进展.近期Si(111)(7×7)-(1×1)相变的实验研究发现,将温度升高到相变温度以上时,7×7岛面积以恒定的衰减速率随时间减小至零,且初始面积越大的岛这个衰减速率就越大.文章作者分析了大量的实验事实,由此提出了一个双速相场模型来解释这个重要而令人困惑的现象.模型重点是:在相变过程中,7×7关键结构变化较快,随后的层错消解过程要慢得多.这个模型完美地解释了相关实验现象,说明该模型抓住了关键物理要素,这种相场方法也可以用于其他半导体表面相变研究.We present a brief report about our research on silicon reconstructed surfaces and phase transitions.Recent experiments on the Si（111）（7×7）-（1×1） phase transition showed that when the temperature is raised above the critical temperature,a 7×7 island decays to zero at a constant area decay rate which increases with the size of the initial area.Based on an analysis of the experimental results we propose a two-speed phase-field model to explain this important but puzzling phenomenon.The key point of our model is that the essential 7×7 structures change fast during the phase transition while erasure of the stacking faults takes substantially more time.Our model satisfactorily explains the experimental phenomena,which shows that the model captures the main physics and that this phase-field method is a good approach for studying semiconductor surface phase transitions.

关 键 词：半导体 表面重构 相变 硅 

分 类 号：O472.1[理学—半导体物理]