GaAs/G_(a1-x)Al_xAs量子阱中激子的结合能  

Binding Energies of Excitons in GaAs/Ga_(1-x)Al_xAs Quantum Wells

作　　者：华文玉[1] 

机构地区：[1]华东工学院应用物理系

出　　处：《华东工学院学报》1990年第4期18-22,共5页

摘　　要：提出ρ和(Ze—Z_h)耦合试探波函数,计算了 GaAs/Ga_(I-x)Al_xAs量子阱中基态激子的结合能随阱宽和阱深的变化关系,并对所得结果进行了讨论。Trial wave functions of p and (Ze—Zn) to Couple are devel- oped in this paper,the binding energies of ground excitons in GaAs/Ga_(1-x) Al_xAs quantum wells are calculated.The variations of binding energies with the well width and well depth are obtained and their behavior is discussed.

关 键 词：钾化镓 激子 量子阱 结合能 

分 类 号：O471.3[理学—半导体物理]