Bi_4Ti_3O_(12)铁电薄膜的制备及研究进展  

Research Progress of Bi_4Ti_3O_(12) Ferroelectric Thin Films

作　　者：黄小丹[1] 许积文[1] 

机构地区：[1]桂林电子科技大学信息材料科学与工程系,广西桂林541004

出　　处：《电工材料》2008年第3期42-45,共4页Electrical Engineering Materials

基　　金：教育部科学技术研究重点项目(208109);广西科学基金项目(桂科自0832247)

摘　　要：铁电薄膜具有良好的铁电、介电性能,在非挥发存储器件方面有很好的应用前景。本文介绍了钛酸铋(Bi4Ti3O12)铁电薄膜的研究现状,对目前Bi4Ti3O12铁电薄膜最常用的几种主要制备方法及其掺杂改性进行了评述,指出了Bi4Ti3O12铁电薄膜研究中亟待解决的几个问题。Ferroelectric thin films have excellent ferroelectric/dielectrie promising application prospect in non-volatile radom acess memory. In this article, the research progress of Bi4Ti3O12 ferroelectric thin films was introduced, some main preparation methods and dopping on the properties of the thin films were summarized in detail at present. The challenge for bismuth titanate ferroelectric thin films was pointed out.

关 键 词：BI4TI3O12铁电薄膜 研究进展 掺杂 

分 类 号：TM221[一般工业技术—材料科学与工程]