ZnO纳米线场效应管的制备及I-V特性研究  

Fabrication and I-V characteristics of ZnO nanowire-based field effect transistors

作　　者：张威[1] 李梦轲[1] 魏强[1] 曹璐[1] 杨志[2] 乔双双[3] 

机构地区：[1]辽宁师范大学物理与电子技术学院,大连116029 [2]兰州大学化学系,兰州730000 [3]大连理工大学物理与光电工程学院,大连116024

出　　处：《物理学报》2008年第9期5887-5892,共6页Acta Physica Sinica

基　　金：辽宁省教育厅创新团队项目(批准号:2007T088);辽宁省自然科学基金(批准号:20072155)资助的课题~~

摘　　要：采用静电探针和原子力探针技术,将化学气相沉积工艺制备的,长度为30—200μm,直径80—750 nm的单根半导体ZnO纳米线搭接在Au,Zn,Al不同功函的金属隔离沟道两端,构建出了最基本的ZnO纳米线绝缘栅场效应管.研究了沟道类型、纳米线直径、退火温度和外加栅压对ZnO纳米线场效应管I-V特性的影响.利用半导体与金属材料的肖特基接触、欧姆接触的产生机理及电子输运理论,对结果进行了分析和讨论.The ZnO nanowire-based insulation gate field effect transistors were fabricated by connecting single ZnO nanowires across three kinds of symmetrical metal trenches （ Au, Zn and Al thin films） with different widths. In the testing processes, the traditional ion beam eroding technology, electronic probe, and atom force microscopy probe methods were employed. The I-V characteristics of various synthesized ZnO nanowire-based devices were researched. The results showed that the main effecting factor on the I- V characteristic is the type of contact between the ZnO nanowire and the surface of different trenches, which may be of the Ohmic or the Schottky contact type in different cases. Finally, the I- V characteristics of the fabricated devices had been discussed by using the electron transport mechanism.

关 键 词：ZNO纳米线 场效应管 I-V特性 

分 类 号：O471[理学—半导体物理]