甚高频高速沉积微晶硅薄膜的研究  

Research on the high-rate deposition of μc-Si:H by VHF-PECVD

作　　者：郭学军[1] 卢景霄[1] 陈永生[1] 张庆丰[1] 文书堂[1] 郑文[1] 申陈海[1] 陈庆东[1] 

机构地区：[1]郑州大学材料物理教育部重点实验室,郑州450052

出　　处：《物理学报》2008年第9期6002-6006,共5页Acta Physica Sinica

基　　金：国家重点基础研究发展计划(批准号:2006CB202601)资助的课题~~

摘　　要：采用甚高频化学气相沉积(VHF-PECVD)技术制备了系列微晶硅(μc-Si:H)薄膜样品,重点研究了硅烷浓度、功率密度、沉积气压和气体总流量对薄膜沉积速率和结晶状态的影响,绘制了沉积气压和功率密度双因素相图.以0.75nm/s的高速沉积了器件质量级的微晶硅薄膜,并以该沉积速率制备出了效率为5.5%的单结微晶硅薄膜电池.The μc-Si：H films were deposited by VHF-PECVD, the effects of silane concentration, power density, deposition pressure and total flow rate on the deposition rate and crystallization of μc-Si ： H were extensively studied. Phase diagram in the plot of deposition pressure against power was determined. The deposition rate of μc-Si ： H has reached 0.75 nm/s. Incorporating such μc-Si：H films as i-layer, the single-junction solar cell on glass substrate showed an conversion efficiency of 5.5%.

关 键 词：微晶硅薄膜 高速沉积 甚高频化学气相沉积 

分 类 号：O484.1[理学—固体物理] TN304.055[理学—物理]