磁控溅射Cu-W薄膜的组织与结构  

Structure of Cu-W Thin Films Deposited by Magnetron Sputtering

作　　者：王瑞[1] 周灵平[1] 汪明朴[2] 朱家俊[1] 李德意[1] 李绍禄[1] 

机构地区：[1]湖南大学材料科学与工程学院,湖南长沙410082 [2]中南大学材料科学与工程学院,湖南长沙410081

出　　处：《材料科学与工程学报》2008年第4期582-584,598,共4页Journal of Materials Science and Engineering

摘　　要：采用双靶磁控溅射共沉积方法制备Cu-W薄膜,其微观结构及形貌通过XRD、TEM和SEM方法测试,结果表明,Cu-W薄膜是由Cu固溶于W或W固溶于Cu的亚稳态固溶体组成,且随着W含量的增加,Cu-W薄膜依次形成面心立方fcc结构的Cu基亚稳固溶体f、cc和bcc结构固溶体的双相区以及体心立方bcc结构的W基亚稳固溶体,晶粒尺寸随溶质原子含量的增加而减小。这些亚稳固溶体的形成是由于溅射出的原子动能足以克服Cu、W固溶所需的混合热,以及溅射过程中粒子的纳米化和成膜过程中引入的大量缺陷造成的。Cu-W thin films were deposited by dual-target magnetron co-sputtering. The structures and micrographs of Cu-W thin films were analyzed by XRD, TEM and SEM. The Cu-W films consist of metastable solid solutions of Cu in W or W in Cu. The structures vary with W content increasing, which are fcc of W in Cu, （fcc＋bcc） two-phase regions and bcc of Cu in W metastable solid solutions. The grain size reduces with the content of solute atom increasing. The formation of Cu-W metastable solid solutions attribute to that the atom energy is enough high to overcome the mix-heat and the nano-particles and a great deal of defects interfuse within thin films.

关 键 词：低维金属材料 铜钨薄膜 磁控溅射 亚稳固溶体 

分 类 号：TB303[一般工业技术—材料科学与工程]