反应烧结碳化硅表面改性的初步研究  

Preliminary study of reaction bonded silicon carbide surface modification

作　　者：王彤彤[1] 高劲松[1] 王笑夷[1] 陈红[1] 郑宣鸣[1] 范镝[1] 申振峰[1] 

机构地区：[1]中国科学院长春光学精密机械与物理研究所光学技术研究中心

出　　处：《光学精密工程》2008年第9期1603-1607,共5页Optics and Precision Engineering

基　　金：国家自然科学基金资助项目(No.60478035)

摘　　要：应用电子束蒸发硅，霍尔离子源电离甲烷，并辅助沉积的方法在反应烧结碳化硅（RBSiC）基底上沉积了碳化硅（SiC：H）改性薄膜。X射线衍射（XRD）测试表明制备的碳化硅改性薄膜为α相。通过控制沉积速率，制备了硬度为9．781～13．087GPa，弹性模量为89．344～123．413GPa的碳化硅改性薄膜。比较同样条件下镀制银膜的抛光良好微晶玻璃和经过精细抛光的改性RBSiC，结果表明两者反射率相近；附着力实验表明，制备的薄膜和基底结合良好；在温度冲击实验下，制备的薄膜无龟裂和脱落。SiC： H surface-modified coatings were fabricated on Reaction Bonded Silicon Carbide（RB SiC） substrates. Silicon was evaporated by E-beam and methane was ionized as reactive gas by End- Hall ion source. X-ray Diffraction（XRD） results show the fabricated film is α phase,its hardness and elastic modulus are in the range of 9. 781-13. 087 GPa and 89. 344-123. 413 GPa, respectively. After surface-modification polishing and coating silver, the reflectance of modified RB SiC film is close to that of fine polished Zerodur glass coating with silver. Moreover, the fabricated coatings to the substrate show very good adhesion and no fall off and cracks in thermal impact test from liquid nitrogen temperature to boiling water temperature for 5 cycles.

关 键 词：薄膜制备 碳化硅薄膜 表面改性 离子辅助电离 硬度和弹性模量 

分 类 号：O484.1[理学—固体物理] TN304.055[理学—物理]