GaAs PHEMT栅选择腐蚀工艺研究  

Study on Selective Gate Etching Technology of GaAs PHEMT

作　　者：王静辉[1] 张力江[1] 吴益竹[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《微纳电子技术》2008年第8期476-479,共4页Micronanoelectronic Technology

摘　　要：基于GaAs PHEMT(赝配高电子迁移率晶体管)材料结构的设计,材料生长过程中增加了一层腐蚀终止层。经过大量的实验和腐蚀液体系的选取,完成了GaAs PHEMT工艺中能用于大批量生产的栅加工工艺。利用选择腐蚀终止层可以很容易地达到夹断电压和漏极电流的批量生产的一致性。本研究利用磷酸腐蚀液体系,在材料的设计中增加了InxGa1-xP腐蚀终止层,结果达到了预期目的,并已用于GaAs 0.25μm PHEMT标准工艺的生产中,获得了良好的经济效益。Based on the design of GaAs PHEMT （pseudo high electron mobility transistor） material structure, an etch stop layer was developed in material growth. Lots of expertments were made, an etch solution system was chosen and the good process for gate recess etch was obtained. The process is used in GaAs PHEMT volume-production and easy to get good uniformity of pinch-off and darin current by selective etch stop layer technology. This problem was solved using phosphate etching solution. An InxGa1-xP etch stop PHEMT material was designed and the good result was achieved. The technology is used in GaAs 0. 25 μm PHEMT standard production line and has good economy benefit.

关 键 词：选择腐蚀 赝配高电子迁移率晶体管 腐蚀终止层 砷化镓 凹槽 

分 类 号：TN386.3[电子电信—物理电子学] TN305.7