GaAs　MMIC中平面Schottky　Diode的C－V特性解析模型  

Analytic Model for C－ V Characteristics of Planar Schottky Diode

作　　者：田彤[1] 孙晓玮 罗晋生[1] 林金庭[1] 

机构地区：[1]西安交通大学微电子所,电子部南京55所

出　　处：《电子学报》1997年第11期75-78,共4页Acta Electronica Sinica

基　　金：国家自然科学基金

摘　　要：本文提出一种采用ＧａＡｓＭＥＳＦＥＴ工艺制造的平面微波变容管Ｃ－Ｖ特性解析模型，该模型着眼于小尺寸、平面化工艺及离子注入工艺，充分考虑了由其产生的栅下沟道串联电阻及侧电容对平面ＳｃｈａｔｔｋｙｄｉｏｄｅＣ－Ｖ特性的影响，这些影响对平面变容管影响较显著而在已有的模型中是被忽略或未作详细讨论的．文中还给出了该模型的算例及与实验结果，已有的几种典型模型算例的比较．结果表明，本文模型中参数易确定，与实验亦附合得很好．In this paper we present a novel physics based analytic model for C- V charactoristics of planar schottky doide which is made in GaAs MESFET process and used in GaAs MMIC.The model focuses on small size, planar technology and ion implant technology, pays much attention to the influnce of side-wall capacitance and under-gate channel series resistance on the C-V chazacteristics of planar schottky doide. Those influnces affect the characteristcs of planar schottky doide notably and are neglected or paid little attention to in other model. In the paper a calculation example of presented model and a comparison between presented model and some other models are presented. The results reveal that the parameter involved in presented model is easy to be determined and the calculation result fits the measured result well.

关 键 词：微波变容管 C-V特性 砷化镓 MMIC 

分 类 号：TN12[电子电信—物理电子学]