具有AlGaAs缓变结构的InGaP/GaAs HBT性能改进分析  

Improved InGaP/GaAs HBT Performances with AlGaAs Graded Layer at the Emitter-base Heterojunction

作　　者：周守利[1] 熊德平[2] 

机构地区：[1]浙江工业大学信息学院,杭州310014 [2]广东工业大学物理与光电工程学院,广州510006

出　　处：《固体电子学研究与进展》2008年第3期388-391,共4页Research & Progress of SSE

摘　　要：对改进型结构具有零导带势垒尖峰的缓变InGaP/AlGaAs/GaAs HBT器件的直流和高频特性进行了理论探讨,并同传统突变结构的InGaP/GaAs HBT的相应性能作了比较。结果表明:在低于30 nm的一定范围内的缓变层厚度下,与突变的InGaP/GaAs HBT相比,改进型结构的InGaP/AlGaAs/GaAs HBT具有更低的offset和开启电压、更强的电流驱动能力、更好的伏-安输出特性和高频特性。A theoretical investigation has been made to the DC and AC performances of an InGaP/GaAs HBT with zero conduction band spike, which can be made by adoption of the compositionally linear-graded AlGaAs layer at emitter-base heterojunction. By comparison with the traditional abrupt InGaP/GaAs HBT, the device with improved structure not only exhibits good performances of lower offset voltage and smaller turn-on voltage, but also shows better current driving capability,I-V output characteristics and AC performance by setting a proper thickness of less than 30 nm of AlGaAs graded layer.

关 键 词：铟镓磷/砷化镓 异质结双极晶体管 伏-安输出特性 截止频率 

分 类 号：TN302[电子电信—物理电子学]