Cl2/Ar/BCl3 ICP刻蚀对AlGaN的损伤研究  

Cl_2/Ar/BCl_3 Inductively Coupled Plasma-induced Etch Damage of AlGaN

作　　者：陈亮[1] 亢勇[1] 赵德刚[2] 李向阳[1] 龚海梅[1] 

机构地区：[1]传感技术国家重点实验室,中国科学院上海技术物理研究所,上海200083 [2]中国科学院半导体研究所,北京100083

出　　处：《固体电子学研究与进展》2008年第3期420-423,共4页Research & Progress of SSE

摘　　要：感应耦合等离子体(ICP)刻蚀在AlGaN基紫外探测器台面制作中起着重要作用,初步研究了Cl2/Ar/BCl3ICP刻蚀对AlGaN材料的损伤。运用X射线光电子能谱(XPS)对ICP刻蚀前后的n型Al0.45Ga0.55N表面进行了分析,并对刻蚀后AlGaN材料在N2气中快速热退火进行了研究。结果表明,在N2气中550°C退火3 min对材料的电学性能有明显的改善作用。ICP etching plays an important role in mesa structures of photodiodes. The damage of AIGaN by Cl2Ar/BCl3 ICP etching was studied in this paper. The surfaces of n-Al0.45 Ga0.55N before and after etching have been investigated by X-ray photoelectron spectroscopy （XPS）. The recovery of ICP etched AlGaN was ambient and it＇s shown that there is an obvious etched AlGaN by RTP at 550℃ in N2ambient. studied by rapid thermal annealing（RTP） in N2 improvement in the electronic properties of ICP

关 键 词：感应耦合等离子体 铝镓氮 X射线光电子能谱 损伤 

分 类 号：TN304.2[电子电信—物理电子学] TN405.98