Si材刻蚀速率的工艺研究  

Technique Research on Etching Rate of Silicon

作　　者：蔡长龙[1] 马睿[1] 周顺[1] 刘欢[1] 刘卫国[1] 

机构地区：[1]西安工业大学光电微系统研究所,西安710032

出　　处：《半导体技术》2008年第10期862-865,共4页Semiconductor Technology

基　　金：西安-应用材料创新基金研究项目(XA-AM-200618)

摘　　要：在采用混合集成方法制造红外热成像阵列器件中,Si的快速刻蚀去除是一个至关重要的问题,它的刻蚀去除质量直接影响红外热成像器件的性能。介绍了等离子体刻蚀的原理、实验过程和实验方法,通过大量工艺实验和测试详细研究和分析了不同刻蚀气体、射频功率和气体流量等工艺参数对Si刻蚀结果的影响,包括刻蚀速率、刻蚀轮廓垂直度和刻蚀表面粗糙度等。通过研究,获得了Si材刻蚀效果与各种工艺参数之间的变化关系,得到了快速刻蚀Si材的较好的工艺参数。Rapid etching of Si is an important part in manufacturing infrared thermal imaging array detectors using hybrid integration. The principal of plasma etching, the experimental process, and the experimental method were introduced, and the influence of the different etching gas, radio frequency, gas flow, and so on, on the etching effect, including the etching rate, etching profile, and the surface roughness, were researched and analyzed through lots of technique experiments and measurements. The relationship between technique parameter and etching effect and the better technique parameter of rapid etching of Si are obtained.

关 键 词：硅 等离子体刻蚀 刻蚀速率 工艺参数 

分 类 号：TN405.98[电子电信—微电子学与固体电子学]