193nm浸没式光刻材料的研究进展  

Research Progress of Materials for 193 nm Immersion Lithography

作　　者：何鉴[1] 高子奇 李冰[1] 郑金红[1] 穆启道[1] 

机构地区：[1]北京科华微电子材料有限公司,北京101312

出　　处：《半导体技术》2008年第9期743-747,共5页Semiconductor Technology

基　　金：国家"十一五"重点攻关计划支持项目(JPPT-115-490)

摘　　要：介绍了193 nm浸没式光刻技术的兴起和面临的挑战。在所涉及的材料方面,对第一代、第二代及第三代的浸没液体进行了介绍,对顶部涂料的类型及其应用进行了归纳概述。并对顶部涂料存在的问题进行了阐述。对光刻胶材料中涉及的产酸剂、主体树脂及光刻胶应用方面进行了综述,并重点描述了无须顶部涂层的光刻胶,最后对193 nm浸没式光刻材料发展趋势作了展望。The challenges being faced for 193 nm immersion lithography are presented. As for the applied materials, the first, second and third generation immersion liquid are introduced, the types and application of topcoats are reviewed, and the problems encountered for the topcoats are analyzed. The photoacid generator, the resin and the application of photoresists are summarized, and the non-topcoat resist polymers are stressed. At last the development trends of 193 nm immersion materials are presented.

关 键 词：193 nm浸没式光刻 浸没液体 顶部涂料 光刻胶 

分 类 号：TN305.7[电子电信—物理电子学]