InP基异质结界面暗电流C-V测试分析  

C-V Test Analysis of Dark Current About InP Heterojunction Interface

作　　者：林琳[1] 刘英斌[1] 陈宏泰[1] 王晶[1] 崔琦[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2008年第9期769-771,779,共4页Semiconductor Technology

摘　　要：采用电化学C-V测试方法,测量分析了InP/InGaAs/InP外延结构的I-V特性,对异质结界面的电学性质进行了表征和分析。采用LP-MOCVD生长技术,对不同界面生长条件的三种样品进行了I-V和XRD测试,得到了InP向InGaAs界面转换采用中断生长、InGaAs向InP界面转换采用As/P直接切换的优化生长方式。用逐层化学腐蚀的方法,对比分析了I-V特性与XRD测试结果的关系,论证了I-V测试结果的有效性,指出了表征异质结界面电学质量的简洁方法。Electrochemical C-V testing method was adopted, the I-V characteristic of InP/InGaAs/InP epitaxial structure was measured and analyzed, and the heterojunction interfacial electrical properties were also characterized and analyzed. The growth technology of LP-MOCVD was adopted, and three samples of different interface growth condition were tested by I-V and XRD. With separating chemical etching method, the relationship between the I-V characteristic and XRD test result was comparative analyzed. The validity of I-V test result was demonstrated, and pithiness method of characterize heterojunction interface electricity quality was indicated.

关 键 词：暗电流 电化学C-V I-V特性 异质结界面 

分 类 号：TN304.055[电子电信—物理电子学] TN307