〈511〉晶向GaAs单晶主次参考面的确定  

Ascertain on the Reference Plane of 〈511〉 Orientation GaAs

作　　者：佟丽英[1] 杨春明[1] 王春梅[1] 史继祥[1] 王聪[1] 

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《半导体技术》2008年第9期793-795,共3页Semiconductor Technology

摘　　要：在半导体照明工程中采用〈511〉晶向GaAs抛光片作为衬底材料进行外延生长制作LED器件。根据〈511〉晶向GaAs单晶的晶格结构特性,在晶片的生产加工过程中采用多步工艺进行其主次参考面的确定,通过采取理论分析和微观观察及X射线衍射测试的方法,互相对照,共同确定GaAs单晶的主次参考面的位置。单晶主次参考面的确定是整个晶片加工工艺链中的关键工艺,对提高生产效率、批量化生产具有很大的实用性。As the basic optics element material, 〈511〉 orientation GaAs wafer is used as the epitaxial substrate to make LED. The position of primary and secondary reference planes of 〈511〉 orientation GaAs single crystal has been investigated. In production process, multi-steps have been adopt to indicate the special crystal structure character, the method to affirm the primary and secondary reference planes is the key technics in GaAs wafer making processes. The theory analyze and micro-figure observing after chemical etch and check against with X-ray diffraction method together to check the reference planes taken, so the quality of GaAs wafer can be improved and the production can be increased.

关 键 词：砷化镓单晶 微观图形 参考面 

分 类 号：TN305.1[电子电信—物理电子学]