原位水汽生长栅介质界面态特性和可靠性研究  

Study on the Interface-State Characteristic and Reliability of the Gate Dielectrics Generated by ISSG

作　　者：孙凌[1] 高超[1] 杨华岳 

机构地区：[1]中国科学院上海微系统与信息技术研究所,上海200050 [2]上海宏力半导体制造有限公司,上海201203

出　　处：《半导体技术》2008年第9期803-806,共4页Semiconductor Technology

摘　　要：介绍了基于原位水汽生长工艺的超薄栅介质膜的可靠性研究。通过电荷泵测试,对工艺参数与界面态密度的关系进行了定性的分析,然后通过热载流子退化和经时击穿的测试对原位水汽生长栅介质膜的可靠性进行了研究。通过测试发现,提高生长温度或减小氢气在反应气体中的比重可以获得更好的界面特性和可靠性,原位水汽生长工艺存在进一步提高的空间。The reliability of MOSFET with gate dielectrics fabricated by in-situ steam generation （ISSG） process are investigated. The qualitative analysis on the relationship of interface density with process parameters were carried out by charge pumping test. The reliability of ISSG gate oxides were investigated through hotcarrier degradation and TDDB （time-dependent dielectric breakdown） .It is demonstrated that increasing process temperature or decreasing H2 fraction in mixed reaction gas could lead to better interface-state characteristic and reliability, indicating a broader exploring space for ISSG process.

关 键 词：原位水汽生长 热载流子注入 经时击穿 

分 类 号：TN305.5[电子电信—物理电子学]