Effect of Ar on Polycrystalline Si Films Deposited by ECR-PECVD using SiH_4  

作　　者：Hua CHENG Aimin WU Nanlin SHI Lishi WEN 

机构地区：[1]Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China [2]Dalian University of Technology, Dalian 116024, China [3]Armor Technique Institute of PLA, Changchun 130117, China

出　　处：《Journal of Materials Science & Technology》2008年第5期690-692,共3页材料科学技术（英文版）

摘　　要：In this paper, polycrystalline silicon films were deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition （ECR-PECVD） using SiH4/Ar and SiH4/H2 gaseous mixture. Effects of argon flow rate on the deposition efficiency and the film property were investigated by comparing with H2. The results indicated that the deposition rate of using Ar as discharge gas was 1.5-2 times higher than that of using H2, while the preferred orientations and the grain sizes of the films were analogous. Film crystallinity increased with the increase of Ar flow rate. Optimized flow ratio of SiH4 to Ar was obtained as F（SiH4）： F（Ar）=10：70 for the highest deposition rate.In this paper, polycrystalline silicon films were deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition （ECR-PECVD） using SiH4/Ar and SiH4/H2 gaseous mixture. Effects of argon flow rate on the deposition efficiency and the film property were investigated by comparing with H2. The results indicated that the deposition rate of using Ar as discharge gas was 1.5-2 times higher than that of using H2, while the preferred orientations and the grain sizes of the films were analogous. Film crystallinity increased with the increase of Ar flow rate. Optimized flow ratio of SiH4 to Ar was obtained as F（SiH4）： F（Ar）=10：70 for the highest deposition rate.

关 键 词：Ar flow rate ECR-PECVD POLY-SI Thin Films 

分 类 号：O484[理学—固体物理]