云南高校图书馆联盟文献共享服务平台- POLY-SI

POLY-SI: 作品数：62被引量：52H指数：3; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：林鸿生段开敏谢茂浓向少华张明高更多>>; 相关机构：中国科学技术大学麦斯克电子材料股份有限公司吉林大学怀化学院更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划国家高技术研究发展计划福建省自然科学基金更多>>

TOPCon结构太阳电池掩膜工艺改进: 《电源技术》2024年第10期2066-2070,共5页代同光袁雅静宋志成张富永谭新; 研究了TOPCon电池硼掺杂产生的硼硅玻璃(BSG)特性,BSG在电池制程中用来保护p+发射极,若BSG保护能力不足,则p+发射极受损,导致掺杂浓度减少或局部被腐蚀,其前表面钝化性能下降,主要表现为U_(oc)降低;浆料和发射极不能形成良好接触,从而...; 关键词：BSG厚度去BSG 去PSG 去绕镀poly-Si清洗 HF酸浓度

TOPCon太阳电池单面沉积Poly-Si的工艺研究: 《人工晶体学报》2024年第5期818-823,共6页代同光谭新宋志成郭永刚袁雅静倪玉凤汪梁; 目前隧穿氧化层钝化接触(TOPCon)电池制造技术越来越成熟,所耗成本不断降低。行业内普遍采用低压化学气相沉积(LPCVD)方式进行双面沉积或单面沉积。单面沉积存在Poly-Si绕镀问题,严重影响电池片转化效率和外观质量,同时正面绕镀层去除...; 关键词：TOPCon太阳电池 Poly-Si绕镀层低压化学气相沉积 BSG PSG 腐蚀速率

基于poly-Si键合层的SACM型Ge/Si APD的优化设计研究: 《中国激光》2024年第8期46-59,共14页张娟苏小萍李嘉辉王战仁柯少颖; 国家自然科学基金(62004087)。; Ge/Si雪崩光电二极管(APD)被广泛应用于近红外探测领域,但由于Ge和Si之间存在4.2%的晶格失配,故难以获得高性能的Ge/Si APD。提出在Ge/Si键合界面处引入多晶硅(poly-Si)键合中间层,弱化Ge/Si失配晶格对APD器件性能的影响。poly-Si引入...; 关键词：材料 Ge/Si雪崩光电二极管晶格失配 poly-Si键合层掺杂浓度

Pulsed Laser Annealed Ga Hyperdoped Poly-Si/SiO_(x)Passivating Contacts for High-Efficiency Monocrystalline Si Solar Cells: 《Energy & Environmental Materials》2023年第3期388-399,共12页Kejun Chen Enrico Napolitani Matteo De Tullio Chun-Sheng Jiang Harvey Guthrey Francesco Sgarbossa San Theingi William Nemeth Matthew Page Paul Stradins Sumit Agarwal David L.Young; the National Renewable Energy Laboratory,operated by Alliance for Sustainable Energy,LLC,for the U.S.Department of Energy(DOE)under Contract No.DE-AC36-08GO28308.; Polycrystalline Si(poly-Si)-based passivating contacts are promising candidates for high-efficiency crystalline Si solar cells.We show that nanosecond-scale pulsed laser melting(PLM)is an industrially viable technique...; 关键词：Ga hyperdoping Ga passivating contacts poly-Si/SiO_(x) pulsed laser melting silicon solar cell

Degradation mechanisms for polycrystalline silicon thin-film transistors with a grain boundary in the channel under negative gate bias stress: 《Chinese Physics B》2022年第12期599-604,共6页Dongli Zhang Mingxiang Wang Huaisheng Wang; Project supported by the National Natural Science Foundation of China(Grant Nos.61971299 and 61974101);the Natural Science Foundation of Jiangsu Province of China(Grant No.BK20201201);the Fund from Suzhou Science and Technology Bureau(Grant No.SYG201933);the Fund from the State Key Laboratory of ASIC and System,Fudan University(Grant No.2021KF005); The negative gate bias stress(NBS)reliability of n-type polycrystalline silicon(poly-Si)thin-film transistors(TFTs)with a distinct defective grain boundary(GB)in the channel is investigated.Results show that conventio...; 关键词：negative bias stress POLY-SI thin-film transistor grain boundary

工作压强对溅射p+-poly-Si/SiO_(x)钝化接触结构的光电特性影响的研究: 《当代化工研究》2022年第22期39-41,共3页王玉超杜朋轩盛之林黄康范占军; 2022年宁夏回族自治区重点研发计划项目“半导体多晶硅环套切技术及应力缺陷研究”(项目编号:2022BDE03004)。; 掺杂多晶硅/氧化硅(poly-Si/SiO_(x))钝化接触是目前达到较高效率的太阳电池的重要结构,常用化学气相沉积(CVD)方法进行多晶硅薄膜的制备,但制备过程伴随着有毒气体和工艺繁杂等方面的制约。本文提出一种更安全且简单的共溅射方法制备...; 关键词：磁控溅射工作压强钝化接触晶粒尺寸光电性能

A 3D SiC MOSFET with poly-silicon/SiC heterojunction diode被引量：1: 《Chinese Physics B》2022年第1期669-674,共6页Sheng-Long Ran Zhi-Yong Huang Sheng-Dong Hu Han Yang Jie Jiang Du Zhou; the Natural Science Foundation Project of Chongqing Science and Technology Commission,China(Grant No.cstc2020jcyj-msxmX0243);the Fundamental Research Funds for the Central Universities,China(Grant No.2020CDJ-LHZZ-024);the Chongqing Technology Innovation and Application Development Key Project,China(Grant No.cstc2019jscx-zdztzxX0051).; A three-dimensional(3D)silicon-carbide(SiC)trench metal-oxide-semiconductor field-effect transistor(MOSFET)with a heterojunction diode(HJD-TMOS)is proposed and studied in this work.The SiC MOSFET is characterized by a...; 关键词：heterojunction diode SiC MOSFET switching loss on-state resistance

Negative gate bias stress effects on conduction and low frequency noise characteristics in p-type poly-Si thin-film transistors: 《Chinese Physics B》2019年第8期397-402,共6页Chao-Yang Han Yuan Liu Yu-Rong Liu Ya-Yi Chen Li Wang Rong-Sheng Chen; Project supported by the National Natural Science Foundation of China(Grant No.61574048);the Pearl River Science and Technology Nova Program of Guangzhou City,China(Grant No.201710010172);the International Science and Technology Cooperation Program of Guangzhou City(Grant No.201807010006);the International Cooperation Program of Guangdong Province,China(Grant No.2018A050506044);the Opening Fund of Key Laboratory of Silicon Device Technology,China(Grant No.KLSDTJJ2018-6); The instability of p-channel low-temperature polycrystalline silicon thin film transistors(poly-Si TFTs)is investigated under negative gate bias stress(NBS)in this work.Firstly,a series of negative bias stress experim...; 关键词：POLYCRYSTALLINE silicon thin film TRANSISTOR NEGATIVE BIAS stress low frequency noise

Key technologies for dual high-k and dual metal gate integration: 《Chinese Physics B》2018年第9期529-534,共6页Yong-Liang Li Qiu-Xia Xu@ and Wen-Wu Wang; Project supported by the National High Technology Research and Development Program of China(Grant No.2015AA010601); The key technologies for the dual high-k and dual metal gate, such as the electrical optimization of metal insert poly-Si stack structure, the separating of high-k and metal gate of n/pMOS in different regions of the ...; 关键词：high-k metal gate metal insert poly-Si stack（MIPS） dual high-k and dual metal gate（DHDMG）

Formation of Poly-Si Films on Glass Substrates by Using Microwave Plasma Heating and Fabrication of TFT’s on the Films: 《Journal of Materials Science and Chemical Engineering》2018年第1期19-24,共6页Hiroki Nakaie Tetsuji Arai Keisuke Arimoto Junji Yamanaka Kiyokazu Nakagawa Kazuki Kamimura Toshiyuki Takamatsu; We have developed an apparatus for producing high-density hydrogen plasma. The atomic hydrogen density was 3.0 × 1021 m?3 at a pressure of 30 Pa, a microwave power of 1000 W, and a hydrogen gas flow rate of 5 sccm. W...; 关键词：MICROWAVE Plasma HEATING POLY-SI Thin Film TRANSISTOR

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