ESD保护器件GGNMOS二次击穿前的建模  

Modeling of ESD Protection Device GGNMOS Before Second Breakdown

作　　者：刘瑶[1,2] 姚若河[2] 高英俊[1] 

机构地区：[1]广西大学物理科学与工程技术学院,南宁530004 [2]华南理工大学微电子研究所,广州510640

出　　处：《微电子学》2008年第5期647-651,共5页Microelectronics

基　　金：国家自然科学基金资助项目(50661001,50061001);广西科学基金资助项目(桂科基0639004)

摘　　要：基于ESD应力下GGNMOS的工作特性,从GGNMOS的内部物理过程,推导建立了二次击穿前GGNMOS的器件级模型,并给出了相应的参数提取方法;实现了输入工艺参数等到模型中,即可仿真GGNMOS二次击穿前的I-V特性。通过与TLP实际测试结果的比较,证实了所推导模型的可行性。Based on the behavior of GGNMOS under ESD conditions, device-level models of GGNMOS before second breakdown were built on the internal physical process, and the related parameter extraction methods were given. I-V characteristics of GGNMOS before second breakdown could be simulated, when process parameters were input into the model. The feasibility of the proposed models has been confirmed by comparing TLP test results with simulation results.

关 键 词：ESD保护器件 GGNMOS 数值建模 大电流效应 

分 类 号：TN406[电子电信—微电子学与固体电子学]