用于微波功率器件的层级式片上功率合成技术  

A Hierarchical On-Chip Power Synthesis Technique for SiGe Microwave Power HBTs

作　　者：黄伟[1,2] 严利人[1,2] 周卫[1,2] 

机构地区：[1]清华大学信息科学与技术国家重点实验室(筹) [2]清华大学微电子学研究所,北京100084

出　　处：《微电子学》2008年第5期691-696,共6页Microelectronics

摘　　要：提出了一个包含版图分布参数和引线寄生参数在内的微波功率HBT的宏模型,建立了通过微波仿真进行器件结构优化的技术方法。基于以上模型和方法,较为全面地评估了实际器件中各寄生参数对器件输出功率的影响,继而提出了片上功率合成的层级式技术方案。数值计算指出,采用该方案,在相同版图面积并且器件的线性度等关键性指标得到保证的情况下,可有效地提高SiGe HBT的功率容量。A distributed large signal model was presented, in which layout distribution parameters, as well as the bonding wire parasitic parameters, were taken into consideration. Emulational ways and means to optimize the design of RF power devices were established. Based on the model and the method, a more comprehensive study was made to estimate effects of parasitic parameters on the device output power, and a hierarchical on-chip power synthesis technique was proposed. Numerical calculations demonstrated that, by using this method, SiC-e HBTs with higher output power could be achieved.

关 键 词：微波功率器件 大信号模型 SIGE HBT 功率合成 

分 类 号：TN385[电子电信—物理电子学]