A New High Voltage SOI Device with a Nonuniform Thickness Drift Region and Its Optimization  

非均匀厚度漂移区SOI高压器件及其优化设计(英文)

作　　者：罗小蓉[1] 张伟[1] 张波[1] 李肇基[1] 阎斌[1] 杨寿国[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054

出　　处：《Journal of Semiconductors》2008年第10期1902-1906,共5页半导体学报（英文版）

基　　金：国家自然科学基金(批准号:60436030,60806025);电子科技大学青年教师基金(批准号:jx0721)资助项目~~

摘　　要：A new SO1 high-voltage device structure with nonuniform thickness drift region （n-uni SOl） and its optimiza- tion design method are proposed. Owing to the nonuniform thickness drift region, the electric field in the SOl layer is modulated and the electric field in the buried layer is enhanced, resulting in an enhancement of breakdown voltage. An analytical model taking the modulation effect into account is presented to optimize the device structure. Based on the analytical model, the dependencies of the electric field distribution and breakdown voltage on the device parameters are investigated. Numerical simulations support the analytical model. The breakdown voltage of the n-uni SOl LDMOS with n = 3 is twice as high as that of a conventional SO1 while its on-resistance maintains low.提出非均匀厚度漂移区SOI高压器件新结构及其优化设计方法.非均匀厚度漂移区调制SOI层的电场并增强埋层电场,从而提高器件击穿电压.考虑到这种调制效应,提出解析模型用以优化设计该新器件的结构参数.借助解析模型,研究了电场分布和器件击穿电压与结构参数的关系.数值仿真证实了解析模型的正确性.具有3阶梯的非均匀厚度漂移区SOI器件耐压为常规结构SOI器件的2倍,且保持较低的导通电阻.

关 键 词：SOI nonuniform thickness drift region electric field MODULATION high voltage 

分 类 号：TN386[电子电信—物理电子学]