MOS Model 20 Based RF-SOI LDMOS Large-Signal Modeling  

基于MOS Model 20的RF-SOI LDMOS大信号建模(英文)

作　　者：王皇[1] 孙玲玲[1] 余志平[2] 刘军[1] 

机构地区：[1]杭州电子科技大学射频电路与系统教育部重点实验室,杭州310037 [2]清华大学微电子学研究所,北京100084

出　　处：《Journal of Semiconductors》2008年第10期1922-1927,共6页半导体学报（英文版）

基　　金：国家自然科学基金资助项目(批准号:60706002)~~

摘　　要：A novel large-signal equivalent circuit model of RF-SOI LDMOS based on Philips MOS Model 20 （MM20） is presented. The weak avalanche effect and the power dissipation caused by self-heating are described. The RF parasitic elements are extracted directly from measured S-parameters with analytical methods. Their final values can be obtained quickly and accurately through the necessary optimization. The model is validated in DC,AC small-signal,and large-signal analyses for an RF-SOI LDMOS of 20-fingers （channel mask length, L = 1μm,finger width, W = 50μm） gate with high resistivity substrate and body-contact. Excellent agreement is achieved between simulated and measured results for DC, S- parameters （10MHz-0.01GHz）, and power characteristics, which shows our model is accurate and reliable. MM20 is improved for RF-SOI LDMOS large-signal applications. This model has been implemented in Verilog-A using the ADS circuit simulator （hpeesofsim）.提出了一种新的基于Philips MOS Model20(MM20)的RF-SOI(radio frequency silicon-on-insulator)LDMOS(laterally diffused MOS)大信号等效电路模型.描述了弱雪崩效应以及由热效应引起的功率耗散现象.射频寄生元件由实验测得的S参数解析提取,并通过必要的优化快速准确地获得最终值.模型的有效性是通过一20栅指(每指栅长L=1μm,宽W=50μm)体接触高阻RF-SOI LDMOS在直流,交流小信号和大信号条件下的实验数据验证的.结果表明,直流、S参数(10MHz^20.01GHz)以及功率特性的仿真和实验测得数据能够很好地拟合,说明本文提出的模型具有良好和可靠的精度.本文完成了对MM20在RF-SOI LDMOS大信号应用领域的拓展.模型由Verilog-A描述,使用ADS(hpeesofsim)电路仿真器.

关 键 词：RF-SOI LDMOS large-signal model MOS Model 20 harmonic power VERILOG-A 

分 类 号：TN386[电子电信—物理电子学]