空位对普通和掺氮直拉硅单晶中氧沉淀形核的作用  

Effect of Vacancy on Nucleation for Oxygen Precipitation in Conventional and Nitrogen-Doped Czochralski Silicon

作　　者：姜翰钦[1] 马向阳[1] 杨德仁[1] 阙端麟[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,杭州310027

出　　处：《Journal of Semiconductors》2008年第10期1984-1987,共4页半导体学报（英文版）

基　　金：教育部长江学者和创新团队发展计划(批准号:IRT0651);新世纪优秀人才支持计划(批准号:NCET04-0537)资助项目~~

摘　　要：研究了普通直拉(CZ)硅单晶和掺氮直拉(NCZ)硅单晶在氩气氛下进行1250℃/50s的快速热处理(RTP)后,再经600～1000℃的不同温区内的缓慢升温处理和1000℃保温处理后的氧沉淀行为.研究表明,由RTP引入的空位在700～800℃间缓慢升温退火时对CZ硅中氧沉淀形核的促进作用最显著,而在800～900℃间缓慢升温退火时对NCZ硅中氧沉淀形核的促进作用最显著;在800℃以上,氮促进氧沉淀形核的作用比空位更强.此外,提出了适用于CZ和NCZ硅片的基于高温RTP和低温缓慢升温热处理的内吸杂工艺.The oxygen precipitation behaviors in conventional and nitrogen-doped Czochralski （NCZ） silicon subjected to the rapid thermal processing （RTP） at 1250℃ for 50s followed by the ramping anneal in different temperature intervals in the range from 600 to 1000℃ and isothermal annealing at 1000℃ are investigated, The results show that the RTP-induced vacancies enhance the nuclea- tion of oxygen precipitates most significantly during the ramping anneal from 700 to 800℃ for conventional CZ silicon. Meanwhile, for NCZ silicon, the most significant vacancy-enhancement of nucleation of oxygen precipitates occurs during the ramping anneal from 800 to 900℃. Nitrogen is superior to vacancy for enhancement of oxygen precipitate nucleation at temperatures higher than 800℃. Furthermore, the internal gettering processes appropriate for CZ and NCZ silicon wafers based on the RTP and ramping anneal in the low temperature range are proposed.

关 键 词：直拉硅单晶 氧沉淀 形核 空位 

分 类 号：TN304.1[电子电信—物理电子学]