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作 者:杨扬[1] 田景华[1] 罗仲梓[2] 吴孙桃[2] 田中群[1]
机构地区:[1]厦门大学化学化工学院化学系固体表面物理化学国家重点实验室,福建厦门361005 [2]厦门大学萨本栋微机电研究中心,福建厦门361005
出 处:《材料工程》2008年第10期278-282,286,共6页Journal of Materials Engineering
基 金:国家自然科学基金重点项目(20433040);科技部973项目(2007CB815303)
摘 要:将普通光刻技术和电化学技术相结合,在微芯片上制备得到了机械可控断裂结法(MCBJ)所需的悬空纳米间隔金属电极对,并分别用热氧化二氧化硅和聚酰亚胺(PI)作为牺牲层使得电极对悬空,明显提高了可控断裂的实验成功率,并延长了微芯片使用寿命。利用分子自组装和MCBJ方法成功构筑了金属/分子/金属结,并实施了对巯基苯胺(BDT)单分子的电学性质测量,得到了BDF的电导值和I-V特性曲线。For studying molecular devices, we fabricated electrodes pair with a nanometer-sized gap on chip by combining photolithography and electrochemical technique. Using the thermal oxidation SiO2 layer and polyimide (PI) layer as sacrifice layer materials respectively, we made the electrodes pair suspends from the substrate which is available for the mechanically controllable break junction (MCBJ) method. On the basis of this progress, the success rate in the MCBJ experiment has been improved and the available life of microchip used in the MCBJ experiment has also been prolonged. With combination of self-assembling (SAM) and MCBJ methods, few molecules of benzene-1, 4-dithiol (BDT) were connected to the two ends of the electrodes pair to form the metal-molecule-metal junction, then the conductance of single molecules and its Ⅰ-Ⅴ curves were measured.
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