微波等离子体同质外延修复金刚石的研究  

Study of Homoepitaxy and Repairing Diamond by MPCVD

作　　者：满卫东[1,2] 谢鹏[2] 吴宇琼[3] 孙蕾[2] 汪建华[1,2] 

机构地区：[1]武汉工程大学湖北省等离子体化学与新材料重点实验室,武汉430073 [2]武汉工程大学绿色化工过程省部共建教育部重点实验室,湖北省新型反应器与绿色化学工艺重点实验室,武汉430073 [3]江汉大学化学与环境工程学院,武汉430056

出　　处：《人工晶体学报》2008年第5期1157-1161,共5页Journal of Synthetic Crystals

基　　金：湖北省高等学校优秀中青年科技创新团队资助项目(2004);湖北省教育厅项目(Q20081505);湖北省新型反应器与绿色化学工艺重点实验室资助课题(RGGT200801)

摘　　要：用微波等离子体化学气相沉积法同质外延生长了有缺陷的金刚石颗粒。在同质外延之前,研究了温度因素对金刚石生长表面形貌的影响,研究表明适宜金刚石同质外延的温度范围非常窄,在1030℃左右;温度低于920℃,大尺寸的金刚石单晶颗粒就很难得到,二次形核现象变的很严重。在实验得出的优化温度条件下,对表面有缺陷的天然金刚石进行了同质外延生长,用扫描电子显微镜(SEM)观察发现,原来金刚石表面的裂缝被修复,外延生长速率达到10.3μm/h。A study of the homoepitaxial growth of flawed diamond using high-power microwave-plasma enhanced chemical vapor deposition （MPCVD） system has been carried out. Prior to the homoepitaxial growth, the morphology of diamond film which was affected by the temperature was studied. The results showed that the temperature of homoepitaxial diamond was rigorous, and the temperature range suitable for epitaxial growth of single crystal diamond was small, around 1030 ℃. If the temperature was lower than 920 ℃, the single crystal diamond was hard to be received and the secondary nucleation is more obvious. Under the optimum temperature condition, a nature diamond with flaw on its surface was uesed to be homoepitaxial growth. The surface morphology of the grown diamond was examined by scanning electron microscopy （SEM）. It was found that the crack has been repaired, and the growth speed was about 10.3 μm/h.

关 键 词：同质外延 金刚石 微波等离子体化学气相沉积 

分 类 号：TQ163[化学工程—高温制品工业]