非晶硅薄膜制备及其晶化特性研究  

Study on the Preparation of Amorphous Silicon Film and Its Crystallization Property

作　　者：罗士雨[1,2] 冯磊[1,2] 汪洪[2] 林辉[1] 滕浩[1] 黄涛华[1] 周圣明[1] 

机构地区：[1]中国科学院上海光学精密机械研究所,上海201800 [2]安徽大学物理与材料科学学院,合肥230039

出　　处：《人工晶体学报》2008年第5期1191-1194,共4页Journal of Synthetic Crystals

摘　　要：用磁控溅射法在K9玻璃上沉积了非晶硅(a-Si)膜和a-Si/Al膜,并将其在流动的N2气氛下进行退火。对退火前后的样品进行Raman光谱、XRD和SEM表征和分析。Raman光谱表明随着退火温度的升高,a-Si膜的散射峰出现了明显的蓝移,但XRD结果表明薄膜仍为非晶态;而a-Si/Al膜在温度很低时就已经开始晶化。a-Si and a-Si/A1 films on K9 glasses were prepared by magnetron sputtering. The films were annealed at flowing N2 atmosphere. The films before and after annealing were investigated by Raman spectra, XRD and SEM. Raman spectra indicate that the scattering peaks of a-Si films have an obvious blueshift with the increase of annealing temperature, but the films are still amorphous according to the XRD results. However, a-Si/Al films began to crystallize at low temperature.

关 键 词：磁控溅射 非晶硅 多晶硅 

分 类 号：O78[理学—晶体学]