HSQ用于电子束曝光的性能分析  

Analysis of Performance of HSQ in Electron Beam Lithography

作　　者：赵珉[1] 陈宝钦[1] 刘明[1] 谢常青[1] 朱效立[1] 

机构地区：[1]中国科学院微电子研究所纳米加工与新器件集成技术实验室,北京100029

出　　处：《微细加工技术》2008年第4期10-13,共4页Microfabrication Technology

基　　金：国家973项目资助(2006CB0N0604)

摘　　要：作为一种非化学放大的无机负性电子束光刻抗蚀剂,HSQ(hydrogen silsesquioxane)具有极高的分辨率(约5 nm),由于灵敏度较低,限制了其在微纳米加工方面的应用。从化学结构变化的角度分析了HSQ在电子束曝光中的性能,通过实验验证了其灵敏度及对比度受前烘温度及显影液浓度的影响较大,并且其在电子束曝光中的邻近效应也可以通过改变这两个条件而得到一定的抑制。根据所得优化工艺条件,在450 nm胶层上,制作出100 nm等间距光栅结构胶层图形,且其侧壁陡直性良好。Hydrogen silsesquioxane （HSQ） is a kind of inorganic negative-tone resist for electron beam lithography with high pattern resolution of about 5 nm. It is a kind of promising resist used in fabrication of nanostructures such as transmission grating （TG）, dots array, and chiral structures. But the poor sensitivity limits the extensive application of HSQ. From the viewpoint of chemical structure, the property of HSQ in electron beam lithography has been proposed and experiments have also been presented with the variety of the exposure dose and development conditions. It is proved by experiments not only the sensitivity and contrast of HSQ but also the influence of proximity effect can be modulated by changing the baking temperature and concentration of developer with the same exposure conditions. 100 nm lines at 200 nm pitch grating patterns with excellent vertical side-wall and line-edge roughness have been achieved in more than 450 nm thickness HSQ layer by increasing the concentration of developer and reducing the baking temperature in combination with optimization of exposure conditions.

关 键 词：HSQ(hydrogen silsesquioxane) 电子束曝光技术 抗蚀剂工艺 邻近效应 

分 类 号：TN305.7[电子电信—物理电子学]