N型Ni基SiC欧姆接触比接触电阻的精确求解  

Accurate calculation of the specific contact resistance for Ni based Ohmic Contacts to the N-type SiC

作　　者：郭辉[1] 张义门[1] 张玉明[1] 汤晓燕[1] 冯倩[1] 

机构地区：[1]西安电子科技大学宽禁带半导体材料与器件教育部重点实验室,陕西西安710071

出　　处：《西安电子科技大学学报》2008年第5期842-845,共4页Journal of Xidian University

基　　金：国家自然科学基金资助(60476007);西安应用材料创新基金资助(XA-AM-200704)

摘　　要：精确求解一维定态薛定谔方程得到电子通过三角形势垒的隧穿几率,用其代替WKB近似计算的隧穿几率精确提取比接触电阻.针对N型Ni基SiC欧姆接触的实验结果进行了计算比较,结果表明采用该方法提取的比接触电阻比采用WKB近似计算的传统方法更加精确和符合实际情况.The specific contact resistance of ohmic contact is deduced accurately based on the electron tunneling probabilities through the triangular barrier to be solved by the one-dimensional time- independent Schrodinger equation. The experimental results of Ni based ohmic contacts on the N-type SiC are compared with that of the simulation. The proposed method has the advantages over the WKB approximation of better accuracy and adaptation to SiC ohmic eontaets.

关 键 词：碳化硅 欧姆接触 比接触电阻 直接隧穿 WKB近似 

分 类 号：TN405[电子电信—微电子学与固体电子学]