LCoS微显示驱动芯片表面形貌研究与改进  

Study and Improvement on Surface Profile of LCoS Micro-Display Driving Chip

作　　者：王文博[1] 王晓慧[1] 黄苒[1] 欧毅[1] 杜寰[1] 夏洋[1] 韩郑生[1] 冯亚云[2] 凌志华[2] 

机构地区：[1]中国科学院微电子研究所,北京100029 [2]中国科学院长春光学精密机械与物理研究所,吉林长春130033

出　　处：《液晶与显示》2008年第5期629-632,共4页Chinese Journal of Liquid Crystals and Displays

基　　金：国家“973”重点基础研究发展计划资助项目(No.2003CB314705)

摘　　要：介绍了LCoS技术的特点与发展现状,LCoS性能的优劣与硅基片平整度有直接关系,着重进行了LCoS微显示驱动技术表面形貌的研究与改进。通过严格控制工艺步骤,降低台阶高度;合理设计版图布局,使台阶叠加在隔离像素区域的沟槽中,这样既能实现像素电极区域的局部平坦化,又因为沟槽不作为显示区域,对整体显示效果影响较小。LCoS technology＇s character and current status were introduced. LCoS＇s performance lies heavily on the profile of Si substrate. Step height was depressed by strictly process controlling. Steps overlap in the slot between pixels by layout optimization. As a result, local planarity of pixel electrode was improved, and effect caused by steps is much lighter, now that it doesn＇t work as display area.

关 键 词：LCOS 微显示 CMP 镜面电极 

分 类 号：TN27[电子电信—物理电子学] TN873.93