应用渐进因子分析法研究SiO_2/Si样品俄歇深度剖析  

Application of Evolving Factor Analysis to study AES Depth Profiles of SiO 2/Si sample

作　　者：谢舒平[1] 范垂祯[1] 

机构地区：[1]中国空间技术研究院兰州物理研究所

出　　处：《分析测试学报》1997年第5期5-7,共3页Journal of Instrumental Analysis

摘　　要：首次利用渐进因子分析法对ＳｉＯ２／Ｓｉ样品俄歇深度剖析过程进行研究，发现ＳｉＯ２／Ｓｉ界面处有ＳｉＯｘ成分存在，ｘ值在１０～１５之间，厚度约为３０ｎｍ，含量接近５０％。Ａｒ＋离子束的轰击使得ＳｉＯ２薄膜内分解产生亚稳态ＳｉＯ２，含量在１７％左右。研究结果表明，渐进因子分析法非常适合于俄歇深度剖析的化学态分析。In application of evolving factor analysis to study AES depth profiles of SiO 2/Si sample,it was found that the SiO x existed in SiO 2/Si interface with x values of 1 0 to 1 5,a depth of about 30 nm,and a content of about 50% However,metastable SiO  2 would be induced by bombardment of Ar + ion cluster in SiO 2 film,with a content of about 15% These results suggested that evolving factor analysis was very suitable in study of AES depth profile

关 键 词：界面 俄歇电子谱 化学态 硅半导体 二氧化硅 

分 类 号：O613.72[理学—无机化学] TN304.12[理学—化学]