掺硼非晶硅薄膜的电阻不稳定性研究  

Investigation on Resistance Instability of Boron-doped Amorphous Silicon Films

作　　者：杨利霞[1] 吴志明[1] 李世彬[1] 蒋亚东[1] 朱魁鹏[1] 李伟[1] 廖乃镘[1] 

机构地区：[1]电子科技大学光电信息学院,电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《半导体光电》2008年第5期705-708,共4页Semiconductor Optoelectronics

基　　金：教育部新世纪优秀人才支持计划资助项目(NCET-04-0896)

摘　　要：以硅烷和硼烷为气相反应气体,采用等离子体增强化学气相沉积法(PECVD)制备了硼掺杂氢化非晶硅薄膜。测试了不同样品电阻随测试时间的变化,以及光照和噪声对材料电学性质的影响。结果表明,刚制备出来的样品存在氧化现象,长时间光照会出现S-W效应,由于RTS噪声的存在,样品电阻会出现随机性波动。Boron-doped a-Si ： H films were grown by the Plasma Enhanced Chemical Vapor Deposition （PECVD）. Sill4 and hydrogen-diluted B2 H6 were used as the precursor gases. The variation of the resistance in different samples on test time was discussed by experiments. The result shows that the oxygenation is found in the new grown sample.. Long time illumination will induce the S-W effect. Because of the random telegraph switching（RTS）, the fluctuation of the resistance in the sample is random.

关 键 词：氢化非晶硅 硼掺杂 噪声 等离子体增强化学气相沉积 

分 类 号：O484.4[理学—固体物理]