Power VDMOS中辐照引起的氧化物陷阱电荷和界面态电荷  

Gamma-irradiation induced oxide trapped charge and interface charge in Power VDMOS

作　　者：蔡小五[1] 海潮和[1] 王立新[1] 陆江[1] 刘刚[1] 夏洋[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《功能材料与器件学报》2008年第5期927-930,共4页Journal of Functional Materials and Devices

摘　　要：为研究PowerVDMOS中辐照引起的氧化物陷阱电荷和界面态电荷情况,用Co-60源对PowerMOSFET进行了总剂量的辐照实验,移位测试了器件的亚阈值曲线漂移情况,通过最大斜率线性外推法和亚阈值分离方法提取了开启电压、增益因子、迁移率、氧化物陷阱电荷和界面态电荷随辐照总剂量的漂移情况。研究结果表明:在1000krad(Si)辐照下器件开启电压漂移小于2V,迁移率退化小于20%,氧化物陷阱电荷和界面态电荷处于比较理想的状态,小于2×1011cm-2。Total ionization dose experiment was carried out using Co - 60 Gamma - irradiation Source and subthreshold transfer characteristic ID - VGS was measured. Then, threshold voltage , gain factor , mobili- ty, oxide charge, interface charge are acquired using linear extrapolation and subthreshold midgap separation methods. The results show that threshold vohage shift is less than 2V and mobility degradation rate is less than 20 percent and oxide trapped charge and interface charge is below 2 × 10^11cm^-2.

关 键 词：VDMOS 辐照 氧化物陷阱电荷 界面态电荷 

分 类 号：TN42[电子电信—微电子学与固体电子学]