Cr掺杂浓度对ZnO基稀磁半导体生长结构的影响  

Concentration's effect on growth structure of Cr doped ZnO-based dilute semiconductor

作　　者：张俊萍[1] 陈希明[1] 李杰[1] 陈霞[1] 

机构地区：[1]天津理工大学电子信息与通信工程学院

出　　处：《天津理工大学学报》2008年第3期18-20,共3页Journal of Tianjin University of Technology

基　　金：天津市自然科学基金重点项目(06YFJZJC00100);天津市教委科技发展重点基金(2004ZD01)

摘　　要：采用射频磁控溅射设备在本征抛光Si(100)衬底上沉积Cr掺杂ZnO薄膜,分析不同掺杂浓度对薄膜的生长结构的影响.分别用XRD、SEM和XRF来表征薄膜的晶相结构、表观形貌和掺杂浓度.实验结果表明,掺杂浓度为2.10%的Zn1-xCrxO薄膜,出现了更好C轴取向性,衍射峰半高宽较窄,样品表面平滑致密,晶粒较大为3.555 nm.The experiment prepared Cr doped ZnO film on polishing Si （100） by RF magnetron sputtering, analysing the different doped concentration＇s influence to growth structure. Crystal structure, appearance and doped concentration can be showed by using XRD, SEM and XRF. The result indicates that the Zn1-xCrxO film with 2.10% doped concentration has much better C axis orientation, narrower width of half of diffraction peak, smooth and compact surface. The crystal grain is comparatively great ,3. 555 nm.

关 键 词：射频磁控溅射法 交替溅射 Cr掺杂ZnO薄膜 

分 类 号：TN304.055[电子电信—物理电子学]