衬底温度对低功率直流磁控溅射ZnO薄膜特性的影响  

Effect of the substrate temperature on the property of ZnO films deposited by magnetron sputtering with DC at the low power

作　　者：蔡利霞[1] 马书懿[1] 李伟[2] 李锡森[1] 李勇[1] 

机构地区：[1]西北师范大学物理与电子工程学院,甘肃兰州730070 [2]河南师范大学物理与信息工程学院,河南新乡453007

出　　处：《功能材料》2008年第8期1279-1282,共4页Journal of Functional Materials

基　　金：国家自然科学基金(60276015);甘肃省自然科学基金(0710RJZA105);甘肃省高分子材料重点实验室开放基金(KF-05-03)

摘　　要：采用低功率直流反应磁控溅射法,在Si衬底上成功制备出了具有高c轴择优取向的ZnO薄膜,利用X射线衍射仪、荧光分光光度计研究了沉积温度对ZnO薄膜微观结构及光致发光特性的影响。结果表明,合适的村底温度有利于提高ZnO薄膜结晶质量;在室温下测量样品的光致发光谱(PL),观察到波长位于440nm左右和485nm左右的蓝色发光峰及527nm左右微弱的绿光峰,随村底温度升高,样品的PL谱中蓝光强度都明显增大,低功率溅射对其蓝光发射具有很重要的影响。综合分析得出440nm左右的蓝光发射应与Zn;有关,485nm附近的蓝先发射是由于氧空位形成的深施主能级上电子跃迁到价带顶的结果,而527nm左右的较弱的绿先发射主要来源于导带底到氧错位缺陷能级的跃迁。生长温度主要是通过改变薄膜中缺陷种类及浓度而影响着ZnO薄膜的发光特性的。tract：Using the magnetron sputtering with DC at the low power, we have prepared the ZnO films with strong c-axis orientation on Si substrates. We also studied the influence of the substrate temperature on the mierostrueture and photoluminescence （PL） properties of ZnO thin films by using X-ray diffraction （XRD） and fluorescence spectrometer. The results showed that the desirable substrate temperature promoted the crystallization of the ZnO films. The photoluminescence （PL） spectrum of the samples has been measured at room temperature. Blue peak at 440 and 485nm, green peak at 527nm of the films have been observed. With the rise of the growth temperature, the intensity of the blue peak increased sharply. It is concluded that the blue peak located at about 440nm was mainly attributed to the interstitial Zinc（ Zni）, the blue peak located at about 485nm may correspond to the electron transition from deep oxygen vacancy level to the valence band, and the green emission peak located at about 527nm corresponds to the transition from the bottom of the conduction band to the local level composed of oxide misplaced defects. The growth temperature mainly influence the luminescence properties of the ZnO thin films via changing the kind of the defects and concentrations.

关 键 词：ZNO薄膜 磁控溅射 X射线衍射 光致发光 

分 类 号：TB383[一般工业技术—材料科学与工程] O484.4[理学—固体物理]