VB-GaAs晶片翘曲度的控制方法  

Method for Reducing the Warp of VB-GaAs Wafer

作　　者：吕菲[1] 赵权[1] 于妍[1] 秦学敏[1] 宋晶[1] 

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《半导体技术》2008年第11期1000-1002,共3页Semiconductor Technology

摘　　要：介绍了一种用化学腐蚀进一步降低VB-GaAs晶片翘曲度的方法。通过控制腐蚀液的配比、温度、时间等参数,显著改善了晶片翘曲度。经过腐蚀的切片、研磨片在检验时易于发现裂纹等缺陷,降低了后续工序中的碎片率,综合加工成品率有了明显提高。A new method for reducing the warp of VB-GaAs wafer was described. The warp of wafers was improved greatly by controlling the proportion, temperature and etching time of the etching solution. The crack defects on the slicing wafers and lapping wafers after etching can be found easily in inspection. By the method, the percent of crack chip was reduced obviously, and the yields are increased greatly in the succeeding process.

关 键 词：垂直布里奇曼法生长的砷化镓 翘曲度 化学腐蚀 光泽度 

分 类 号：TN604[电子电信—电路与系统]