GaN基侧向外延生长技术与特性研究  

Study on ELO Technology and Characteristic of GaN

作　　者：彭晓雷[1] 牛萍娟[1] 田海涛[1] 李晓云[1] 战瑛[1] 刘伟[1] 

机构地区：[1]天津工业大学信息与通信工程学院,天津300160

出　　处：《半导体技术》2008年第11期1011-1015,共5页Semiconductor Technology

摘　　要：为解决目前外延生长技术存在的弊端,总结了新的侧向外延方法以减少GaN中的位错密度,提高晶体质量。主要研究了在蓝宝石图形衬底上侧向外延生长GaN的技术。用MOCVD侧向外延技术的方法获得了很少位错的生长在掩膜层上的GaN薄膜,晶体的质量得到了改善。X射线和TEM测试出掩膜层能够阻挡其下GaN层中的穿透位错继续向上传播,用这种方法能够有效地降低位错密度,但同时也引出了一些新的问题。In order to overcome the current shortcomings of epitaxial technique, the ELO technique was summarized so as to reduce the dislocation density of GaN and improve the crystal quality. Lateral epitaxial overgrowth of GaN on the patterned sapphire was mainly investigated. High quality GaN was grown on GaN substrate with stripe pattern by metalorganic CVD by means of epitaxial lateral overgrowth. X-ray and TEM experiments show that with ELO procedure the propagation of defects under the mask is blocked, and the coherently grown GaN above the window also experiences a drastic reduction in defect density, but some new problems appear.

关 键 词：侧向外延 金属有机化学气相沉积 X射线 透射电子显微镜 

分 类 号：TN304.054[电子电信—物理电子学]