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机构地区:[1]中国电子科技集团公司第四十七研究所,沈阳110032
出 处:《微处理机》2008年第4期44-45,共2页Microprocessors
摘 要:首先对有关薄膜电阻的理论作了一定的探讨,得出薄膜电阻随电阻率的增加,其温度系数将会减小;在一定厚度范围内薄膜厚度减小,其温度系数减小;适当的成膜工艺能控制和改善电阻的温度系数的结论。给出了制备薄膜电阻的试验方法(调整薄膜的淀积条件以获得高质量的薄膜,再通过热处理激活)及试验结果,对影响电阻特性及稳定性的一些条件进行了讨论,并探讨了高稳定薄膜电阻技术在集成电路中的应用前景。该工艺现已在双极和MOS电路中得到了很好的应用,拥有更快、更好的发展前景。This article on the resistance of the thin film of a certain theory, the thin film resistors come with the increase in the rate of resistance, which will reduce the temperature coefficient; a certain range of thickness of the film thickness decreases, the temperature coefficient decreases; as appropriate Membrane technology to control and improve the temPerature coefficient of resistance conclusion. Preparation gives the film the resistance test method (to adjust the film deposition conditions in order to obtain high - quality films, and then activated by heat treatment) and the results of tests on the impact resistance characteristics and stability of a number of conditions were discussed and explored the high - Stability of the film resistor technology in the integrated circuit in the application: the technology is now in the bipolar and MOS circuit has been very good applications, with faster and better development prospects.
分 类 号:TN306[电子电信—物理电子学]
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