Modeling of High-Voltage LDMOS for PDP Driver ICs  

PDP驱动芯片中高压LDMOS建模(英文)

作　　者：李海松[1] 孙伟锋[1] 易扬波[1] 时龙兴[1] 

机构地区：[1]东南大学国家专用集成电路系统工程技术研究中心,南京210096

出　　处：《Journal of Semiconductors》2008年第11期2110-2114,共5页半导体学报（英文版）

基　　金：the National High Technology Research and Development Program of China(No.2004AA1Z1060)~~

摘　　要：A SPICE sub-circuit model is developed for high-voltage LDMOS transistors integrated in PDP driver ICs. The model accounts for intrinsic LDMOS phenomena such as the quasi-saturation effects, voltage-dependent drift resistance, self-heating effects, and Miller capacitance. In contrast to most physical or sub-circuit models, the proposed model not only provides precise simulated results,but also brings a very fast modeling procedure. Furthermore,the model also can be embedded in a commercial SPICE simulator easily. The simulation results using the presented models agree well with the measured ones and the error is less than 5%.建立了PDP驱动芯片用高压LDMOS的SPICE子电路模型,该模型集成了LDMOS固有特性:准饱和特性、电压控漂移区电阻、自热效应、密勒电容等.与其他物理模型和子电路模型比较,该模型不但能提供准确的模拟结果,而且建模简单快捷,另外该模型可较容易地嵌入SPICE模拟软件中.模型的实际应用结果显示:模拟与实测结果误差在5%以内.

关 键 词：MODEL LDMOS SUB-CIRCUIT PDP driver ICs 

分 类 号：TN492[电子电信—微电子学与固体电子学]