键合方法研制InAsP/InGaAsP量子阱1.3μm垂直腔面发射激光器  

Fabrication of InAsP/InGaAsP Quantum-Well 1.3μm VCSELs by Direct Wafer-Bonding

作　　者：劳燕锋[1] 曹春芳[1] 吴惠桢[1] 曹萌[1] 刘成[1] 谢正生[1] 龚谦[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海200050

出　　处：《Journal of Semiconductors》2008年第11期2286-2291,共6页半导体学报（英文版）

基　　金：国家重点基础研究发展规划资助项目(批准号:2003CB314903)~~

摘　　要：设计并研制了由InAsP/InGaAsP应变补偿多量子阱有源层、SiO2/TiO2介质薄膜和GaAs/Al(Ga)As半导体分布布拉格反射镜(DBR)构成的垂直腔面发射激光器(VCSEL).采用直接键合技术实现InP基有源层与GaAs基DBR的晶片融合,并经过侧向湿法腐蚀定义电流限制孔径和沉积介质薄膜DBR等关键器件工艺,研制出InAsP/InGaAsP量子阱垂直腔面发射激光器,其阈值电流为13.5mA,单模激射波长为1288.6nm.We designed and fabricated a vertical-cavity surface-emitting laser （VCSEL） that consisted of an InP-based active layer with InAsP/InGaAsP strain-compensated multi-quantum wells,SiO2/TiO2 dielectric film,and GaAs/AlAs semiconductor distributed Bragg reflectors （DBRs）. The InP-based active layers and GaAs-based DBRs were integrated using wafer-direct bonding techniques. Then, devices were successfully fabricated upon related device processing such as current-aperture definition using wet-etching undercut techniques and deposition of dielectric DBR, etc. The threshold current of the VCSEL is 13.5mA and the wavelength of the single mode is 1288.6nm.

关 键 词：垂直腔面发射激光器 晶片直接键合 隧道结 

分 类 号：TN248[电子电信—物理电子学]