金刚石基底上氮化硼薄膜的场发射特性研究  

Field Emission Characteristics of Boron Nitride Film Deposited on Dimond Film Substrate

作　　者：刘立华[1,2] 李英爱[1] 顾广瑞[3] 赵永年[1] 

机构地区：[1]吉林大学超硬材料国家重点实验室,吉林长春130012 [2]吉林师范大学物理学院,吉林四平136000 [3]延边大学理工学院物理系,吉林延吉133002

出　　处：《高压物理学报》2008年第3期309-312,共4页Chinese Journal of High Pressure Physics

摘　　要：利用射频磁控溅射方法,在金刚石膜上沉积了氮化硼薄膜。红外光谱分析表明,氮化硼薄膜的结构为六角氮化硼。在超高真空系统中测量了样品的场发射特性,沉积在金刚石膜上的氮化硼薄膜的阈值电场为12 V/μm,最大发射电流密度为272μA/cm2。并且沉积在金刚石膜上的氮化硼薄膜的场发射特性明显优于金刚石薄膜本身的场发射特性。这说明,氮化硼薄膜可以有效地改善金刚石膜的场发射特性。场发射Fowler-Nordheim(F-N)曲线表明,电子发射是通过遂穿表面势垒完成的。Boron nitride（BN） thin film on diamond film substrate was synthesized by radio frequency （rf） magnetic sputtering physical vapor deposition. The field emission characteristics of diamond film and BN coated diamond film were measured in an ultrahigh vacuum system. Experiments demonstrate that BN film is effective in improving the field emission characteristics of diamond film. The threshold electric field is 12 V/μm and highest emission current density is 272 μA/cm^2 for the BN coated dia- mond film. The Fowler-Nordheim plots show that electron emission is due to tunneling over a barrier.

关 键 词：氮化硼薄膜 场发射特性 磁控溅射 

分 类 号：O521.2[理学—高压高温物理] TN873.95[理学—物理]