不同衬底材料的ZnO/Si异质结I-V及光电特性  

I-V and photoelectricity properties of ZnO/Si heterojunction on different substrate

作　　者：刘峥嵘[1] 谢家纯[1] 郭俊福[1] 李雪白[1] 赵朝阳[2] 刘文齐[3] 傅竹西[1] 

机构地区：[1]中国科学技术大学物理系,安徽合肥230026 [2]中国科学技术大学国家同步辐射实验室,安徽合肥230027 [3]中国科学技术大学合肥微尺度物质科学国家实验室,安徽合肥230026

出　　处：《中国科学技术大学学报》2008年第11期1262-1267,共6页JUSTC

基　　金：国家自然科学基金(50132040);中国科学院知识创新项目(KJCX2-SW-04)资助

摘　　要：采用脉冲激光沉积(PLD)技术和微电子平面工艺,用不同表面掺杂的Si作为衬底制备了ZnO/Si异质结,并且以p-Si(p-)为衬底制备了ZnO(含Mn0.2%)/Si异质结、包含SiC缓冲层的ZnO/SiC/Si和ZnO(含Mn0.2%)/SiC/Si结构,测试了样品的XRD曲线、I-V特性曲线和P-E(光电响应)特性曲线.结果发现ZnO/n-Si结有很低的反向暗电流,SiC缓冲层能提高反向击穿电压,ZnO/p-Si(p+)异质结能有较强的光电响应,ZnO/n-Si(n-)更适合作为大波段区间的光探测器.还发现波长470,480,490nm处类似于声子伴线的光谱结构.ZnO/Si heterojunctions on different surfaces of variously doped silicon was prepared by means of the pulsed laser deposition technology （PLD） and microelectronics technology plane, and the structure of ZnO （including Mn 0.2%）/Si, ZnO/SiC/Si, ZnO （including Mn 0.2%）/SiC/Si on p-Si（p-） taking SiC as the buffer layer was also prepared. The curve of XRD, I-V characteristic and spectral response was measured. It was found that the reverse current of ZnO/n-Si heterojunction is low, the buffer layer of SiC can improve the reverse breakdown voltage, the photoelectric response of ZnO/p-Si（p＋） heterojunction is more intense, and ZnO/n-Si（n- ） is more suited to be a big-band range of photodetectors. In the Figures of P-E, peaks at 470 nm, 480 nm, 490 nm （wavelength） look like assisted phonon replicas.

关 键 词：ZNO SiC 脉冲激光沉积 异质结 深能级 

分 类 号：TN303[电子电信—物理电子学]