退火处理对脉冲激光沉积制备ZnS薄膜的影响  

Influence of annealing on ZnS thin films by PLD

作　　者：纠智先[1] 李强[1] 孙金战 

机构地区：[1]武汉工业学院数理科学系,湖北武汉430023 [2]河南省上蔡县第一高级中学,河南驻马店463800

出　　处：《武汉工业学院学报》2008年第4期113-115,共3页Journal of Wuhan Polytechnic University

摘　　要：利用射频辅助脉冲激光沉积技术,研究了退火处理对制备ZnS薄膜的影响。利用X射线衍射(XRD)和扫描电子显微镜(SEM)对制备样品的结构、形貌特性进行了表征。结果表明:退火处理更有利于ZnS薄膜的发光。ZnS thin films were deposited by laser with radio frequency plasma by means of annealing. X - ray diffraction （XRD） and scanning electron microscope （SEM） were employed to characterize the structure and morphology of samples. The resuhs showed that annealing may improve the emission efficiency of ZnS thin films.

关 键 词：脉冲激光沉积 ZNS薄膜 退火 

分 类 号：O528.42[理学—高压高温物理]