Structural,Electrical,and Optical Properties of Transparent Conductive Al-Doped ZnO Films Prepared by RF Magnetron Sputtering  

RF磁控溅射制备AZO透明导电薄膜及其性能(英文)

作　　者：杨伟锋[1] 刘著光[1] 张峰[1] 黄火林[1] 吴正云[1,2] 

机构地区：[1]厦门大学物理系,厦门361005 [2]厦门大学萨本栋微机电中心,厦门361005

出　　处：《Journal of Semiconductors》2008年第12期2311-2315,共5页半导体学报（英文版）

摘　　要：Highly conductive transparent Al-doped zinc oxide （AZO） films with highly （002）-preferred orientation were successfully deposited on glass substrates at room temperature by RF magnetron sputtering. Optimization of deposition parameters was based on sputtering RF power and Ar pressure in the vacuum chamber. AZO films of 180nm with an electrical resistivity as low as 2.68 × 10^-3 Ω· cm and an average optical transmission of 90% in the visible range were obtained at RF power of 250W and Ar pressure of 1.2Pa. The effect of chemisorption of oxygen on the grain boundary would capture electrons from conduction band and lead the formation of potential barriers among the crystallites,which will influence the electric property of the AZO thin films. The films have satisfactory properties of low resistance and high transmittance for application as transparent conductive electrodes in light emitting diodes （LEDs） and solar cells.室温下采用RF磁控溅射技术在石英衬底上制备了多晶ZnO:Al(AZO)透明导电薄膜,通过XRD,AFM,AES,Hall效应及透射光谱等测试研究了RF溅射功率、氩气压强对薄膜的结构、电学和光学性能的影响.分析表明:在最优条件下(溅射功率为250W,氩气压强为1.2Pa时),180nmAZO薄膜的电阻率为2.68×10-3Ω.cm,可见光区平均透射率为90%,适合作为发光二极管和太阳能电池的透明电极.所制备的AZO薄膜具有c轴择优取向,晶粒间界中的O原子吸附是限制薄膜电学性能的主要因素.

关 键 词：RF magnetron sputtering transparent conductive film AZO film 

分 类 号：TB383.2[一般工业技术—材料科学与工程]