Power Characteristics of Metamorphic In_(0.52)Al_(0.48)As/In_(0.6)Ga_(0.4)As HEMTs on GaAs Substrates with T-Shaped Gate  

T形栅In_(0.52)Al_(0.48)As/In_(0.6)Ga_(0.4)As MHEMTs功率器件(英文)

作　　者：黎明[1] 张海英[1] 徐静波[1] 付晓君[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《Journal of Semiconductors》2008年第12期2331-2334,共4页半导体学报（英文版）

基　　金：supported by the State Key Development Programfor Basic Research of China(No.G2002CB311901);the Equipment Investigation Programin Advance(No.61501050401C);the Dean Fund of the Institute of Microelectronics,Chinese Academy of Sciences,(No.O6SB124004)~~

摘　　要：200nm gate-length power InAlAs/InGaAs MHEMTs with T-shaped gate are characterized for DC, RF, and power performance. The MHEMTs show excellent DC output characteristics with an extrinsic transconductance of 510mS/ mm and a threshold voltage of - 1.8V. The fT and fmax obtained for the 0.2μm × 100μm MHEMTs are 138 and 78GHz, respectively. Power characteristics are obtained under different frequencies. When input power （Pin） is - 0. 88dBm （or 2. 11dBm）,the MHEMTs exhibit high power characteristics at 8GHz. Output power （Pout） ,associated gain, power added efficiency （PAE） and density of Pout are 4. 05（13.79）dBm,14. 9（11.68）dB,67. 74（75.1）% ,254（239）mW/mm respectively. These promising results are on the path to the application of millimeter wave devices and integrated circuits with improved manufacturability over InP HEMT.利用电子束光刻技术制备了200nm栅长GaAs基T型栅InAl As/InGaAs MHEMT器件.该GaAs基MHEMT器件具有优越的直流、高频和功率性能,跨导、饱和漏电流密度、阈值电压、电流增益截止频率和最大振荡频率分别达到510mS/mm,605mA/mm,-1.8V,138GHz和78GHz.在8GHz下,输入功率为-0.88(2.11)dBm时,输出功率、增益、PAE、输出功率密度分别为14.05(13.79)dBm,14.9(11.68)dB,67.74(75.1)%,254(239)mW/mm,为进一步研究高性能GaAs基MHEMT功率器件奠定了基础.

关 键 词：MHEMT INALAS/INGAAS power characteristics T-shaped gate 

分 类 号：TN386[电子电信—物理电子学]