云南高校图书馆联盟文献共享服务平台- INALAS/INGAAS

INALAS/INGAAS: 作品数：35被引量：23H指数：2; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：敖金平张海英徐静波付晓君曾庆明更多>>; 相关机构：中国科学院中国科学院微电子研究所河北半导体研究所北京理工大学更多>>; 相关期刊：《红外与毫米波学报》《Chinese Physics B》《Chinese Physics Letters》《哈尔滨师范大学自然科学学报》更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划中国人民解放军总装备部预研基金中国科学院微电子研究所所长基金更多>>

Planar InAlAs/InGaAs avalanche photodiode with 360 GHz gain×bandwidth product: 《Chinese Physics B》2023年第9期103-107,共5页王帅叶焓耿立妍肖帆褚艺渺郑煜韩勤; the National Key R&D Program of China(Grant No.2020YFB1805701);the National Natural Foundation of China(Grant No.61934003)。; This paper describes a guardring-free planar InAlAs/InGaAs avalanche photodiode(APD)by computational simulations and experimental results.The APD adopts the structure of separate absorption,charge,and multiplication(S...; 关键词：avalanche photodiode PLANAR gain×bandwidth product dark current

截止波长2.2μm的平面型延伸波长InGaAs探测器: 《红外与毫米波学报》2022年第5期804-809,共6页程吉凤李雪邵秀梅李淘王红真马英杰杨波龚海梅; 上海市优秀学术/技术带头人计划资助(21XD1404200);中国科学院重点部署项目(ZDRW-CN-2019-3);中国科学院联合基金(6141A01170106);上海市级科技重大专项(2019SHZDZX01);国家自然科学基金(62075229);国家自然科学基金(62175250)。; 采用闭管扩散的方法成功研制了截止波长2.2μm的平面型延伸波长InGaAs探测器芯片。在分子束外延法(MBE)生长的In_(0.75)Al_(0.25)As/In_(0.75)Ga_(0.25)As/In_(0.75)Al_(0.25)As外延材料上,采用砷化锌作为扩散掺杂源、SiN_(x)作为扩散...; 关键词：延伸波长 INALAS/INGAAS 扩散暗电流密度量子效率

Impact of gate offset in gate recess on DC and RF performance of InAlAs/InGaAs InP-based HEMTs: 《Chinese Physics B》2022年第5期720-724,共5页Shurui Cao Ruize Feng Bo Wang Tong Liu Peng Ding Zhi Jin; Project supported by the National Nature Science Foundation of China(Grant No.61434006)。; A set of 100-nm gate-length In P-based high electron mobility transistors(HEMTs)were designed and fabricated with different gate offsets in gate recess.A novel technology was proposed for independent definition of gat...; 关键词：InP HEMT INGAAS/INALAS cut-off frequency(fT) maximum oscillation frequency(fmax) asymmetric gate recess

High-power InAlAs/InGaAs Schottky barrier photodiodes for analog microwave signal transmission被引量：1: 《Journal of Semiconductors》2022年第1期44-48,共5页K.S.Zhuravlev A.L.Chizh K.B.Mikitchuk A.M.Gilinsky I.B.Chistokhin N.A.Valisheva D.V.Dmitriev A.I.Toropov M.S.Aksenov; supported by the Russian Science Foundation(grant number 19-72-30023)。; The design,manufacturing and DC and microwave characterization of high-power Schottky barrier In Al As/In Ga As back-illuminated mesa structure photodiodes are presented.The photodiodes with 10 and 15μm mesa diameter...; 关键词：InAlAs/InGaAs heterostructures microwave photodiodes microwave photonics

具有优化倍增层InAlAs/InGaAs雪崩光电二极管被引量：3: 《红外与毫米波学报》2021年第6期715-720,共6页顾宇强谭明吴渊渊卢建娅李雪飞陆书龙; Supported by the National High Technology Research and Development Program of China(2018YFB2003305);the Key R&D Program of Jiangsu Province(BE2018005);the Science and Technology Service Network Initiative of the Chinese Academy of Sciences(KFJ-STS-ZDTP-086);the Support From SINANO(Y8AAQ11003);Natural Science Foundation of Jiangsu Province(BK20180252)。; 通过优化倍增层的厚度,研究了InAlAs/InGaAs雪崩光电二极管增益带宽积和暗电流之间的关系。利用仿真计算得出200 nm厚的倍增层能够改善增益带宽积并降低暗电流。制成的InAlAs/InGaAs雪崩光电二极管性能优异,与计算趋势一致。在获得0.85 ...; 关键词：雪崩光电二极管增益带宽积暗电流

InAlAs/InGaAs/InP基PHEMTs小信号建模及低噪声应用（英文）被引量：1: 《红外与毫米波学报》2018年第6期683-687,共5页刘军于伟华杨宋源侯彦飞崔大胜吕昕; Supported by National Natural Science Foundation of China(61771057); 利用改进的小信号模型对采用100nmInAlAs/InGaAs/InP工艺设计实现的PHEMTs器件进行建模,并设计实现了一款W波段单片低噪声放大器进行信号模型的验证。为了进一步改善信号模型低频S参数拟合差的精度,该小信号模型考虑了栅源和栅漏二极管...; 关键词：InAlAs/InGaAs/InP 赝高电子迁移率晶体管(PHEMTs) 小信号模型毫米波和亚毫米波单片微波集成电路(MMIC) 低噪声放大器

太赫兹InP基InAlAs/InGaAs PHEMTs的研制（英文）被引量：3: 《红外与毫米波学报》2018年第2期135-139,共5页王志明黄辉胡志富赵卓彬崔玉兴孙希国李亮付兴昌吕昕; Supported by National Natural Science Foundation of China(61275107); 研制了一种T型栅长为90 nm的InP基In_(0.52)Al_(0.48)As/In_(0.65)Ga_(0.35)As赝配高电子迁移率晶体管(PHEMTs).该器件的总栅宽为2×25μm,展现了极好的DC直流和RF射频特性,其最大饱和电流密度和最大有效跨导分别为894 m A/mm和1 640 m ...; 关键词：磷化铟赝配高电子迁移率晶体管 INALAS/INGAAS 在片测试单片集成电路

Effects of proton irradiation at different incident angles on InAlAs/InGaAs InP-based HEMTs被引量：1: 《Chinese Physics B》2018年第2期625-629,共5页孙树祥魏志超夏鹏辉王文斌段智勇李玉晓钟英辉丁芃金智; Project supported by the National Natural Science Foundation of China(Grant Nos.11775191,61404115,61434006,and 11475256);the Program for Innovative Research Team(in Science and Technology)in University of Henan Province,China(Grant No.18IRTSTHN016);the Development Fund for Outstanding Young Teachers in Zhengzhou University of China(Grant No.1521317004); InP-based high electron mobility transistors（HEMTs） will be affected by protons from different directions in space radiation applications. The proton irradiation effects on InAlAs/InGaAs hetero-junction structures o...; 关键词：proton irradiation InP-based HEMTs InAlAs/InGaAs hetero-junction incident angle

Physical modeling of direct current and radio frequency characteristics for In P-based InAlAs/InGaAs HEMTs被引量：2: 《Chinese Physics B》2016年第10期509-512,共4页孙树祥吉慧芳姚会娟李胜金智丁芃钟英辉; supported by the National Natural Science Foundation of China(Grant Nos.61404115 and 61434006);the Postdoctoral Science Foundation of Henan Province,China(Grant No.2014006);the Development Fund for Outstanding Young Teachers of Zhengzhou University(Grant No.1521317004); Direct current（DC） and radio frequency（RF） performances of InP-based high electron mobility transistors（HEMTs）are investigated by Sentaurus TCAD. The physical models including hydrodynamic transport model, Shock...; 关键词：InP-based HEMT hydrodynamic model the current gain cutoff frequency(f_T) the maximum oscillation frequency(f_(max))

Design and implementation of 83-nm low noise InP-based InAlAs/InGaAs PHEMTs: 《Journal of Semiconductors》2015年第8期83-87,共5页王志明赵卓彬胡志富黄辉崔玉兴孙希国默江辉李亮付兴昌吕昕; supported by the National Natural Science Foundation of China(No.61275107); 83-nm T-shaped gate InP-based In0.52Al0.48As/In0.65Ga0.35As pseudomorphic high electron mobility transistors （PHEMTs） with excellent DC and RF performance as well as low noise characteristics are reported, including...; 关键词：INP PHEMT millimeter wave low noise on-wafer measurement

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